Charge Collection Measurements in single-type column 3D Sensors
نویسندگان
چکیده
M. Scaringella*, A. Polyakov, and H. F.-W. Sadrozinski SCIPP, UC Santa Cruz, CA 95064 USA M. Bruzzi, C. Tosi Dipt. Energetica, Univ of Florence . Via S. Marta 3, I-50139 Firenze, Italy M. Boscardin, C. Piemonte, A. Pozza, S. Ronchin, and N. Zorzi ITC-irst, Divisione Microsistemi, Via Sommarive 18, I-38050 Povo (Trento), Italy G.-F. Dalla Betta DIT, Università di Trento, Via Sommarive 14, I-38050 Povo (Trento), Italy Abstract We report on charge collection studies on 3D silicon detectors of single-type column n-implants in psubstrate, configured either as strip or as pad detectors. The charge is generated by penetrating beta particles from a Sr source which, together with a scintillation counter, serves as an electron telescope. The charge collection as a function of bias voltage is compared with the depletion thickness derived from the measured C-V characteristics.
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